pzt3904 transistor (npn) features power dissipation p cm: 1 w (tamb=25 ) collector current i cm: 0.2 a collector-base voltage v (br)cbo: 60 v operating and storage j unction temperature range t j, t stg: -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=10a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo ic=1ma,i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 6 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =10v,i c =0.1ma 40 h fe(2) v ce =1v,i c =1ma 70 h fe(3) v ce =1v,i c =10ma 100 300 h fe(4) v ce =1v,i c =50ma 60 dc current gain h fe(5) v ce =1v,i c =100ma 30 v ce(sat) i c =10ma,i b =1ma 0.2 v collector-emitter saturation voltage v ce(sat) i c =50ma,i b =5ma 0.3 v v be(sat) i c =10ma,i b =1ma 0.65 0.85 v base-emitter saturation voltage v be(sat) i c =50ma,i b =5ma 0.95 v transition frequency f t v ce =20v,i c =10ma,f=100mhz 300 mhz collector output capacitance c ob v cb =5v,i e =0,f=1mhz 4 pf noise figure nf v ce =5v,i c =0.1ma, f=10hz to 15.7khz,rg=1k ? 5 db delay time t d 35 ns rise time t r v cc =3v, i c =10ma,v be(off) =0.5v,i b1 =1ma 35 ns storage time t s 200 ns fall time t f v cc =3v, i c =10ma i b1 = i b2 = 1ma 50 ns SOT-223 1. base 2. collector 3. emitter pzt3904 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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